PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Zappettini A., Zha M., Marchini L., Calestani D., Mosca R., Gombia E., Zanotti L., Zanichelli M., Pavesi M., Auricchio N., Caroli E. Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-Ray Detector Material. In: Ieee Transactions on Nuclear Science, vol. 56 (4) pp. 1743 - 1746. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, USA, 2009.
 
 
Abstract
(English)
Two-inch-diameter CdZnTe crystals doped with indium were grown by the boron oxide encapsulated vertical Bridgman technique. The crystals showed large single crystalline yield and low etch pit density. The background impurity content was dominated by boron in concentration lower than 1 ppm. High resistivity was obtained and a procedure for contact preparation was developed. The mobility-lifetime product of the material was determined by both X-ray irradiation and photocurrent spectroscopy. The X-ray detector prepared with this material showed good spectroscopic performance.
DOI: 10.1109/TNS.2009.2016964
Subject Cadmium Zinc Telluride
Crystal growth
Semiconductor growth
Semiconductor materials
Semiconductor radiation detectors


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