Istituto dei materiali per l'elettronica ed il magnetismo     
Sylla L., Fauler A., Fiederle M., Duffar T., Dieguez E., Zanotti L., Zappettini A., Roosen G. Dewetting During the Crystal Growth of (Cd,Zn)Te:In Under Microgravity. In: Ieee Transactions on Nuclear Science, vol. 56 (4) pp. 1747 - 1751. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, USA, 2009.
The phenomenon of "dewetting" associated with the Vertical Bridgman (VB) crystal growth technique leads to the growth of a crystal without contact with the crucible. One dramatic consequence of this modified VB process is the reduction of structural defects within the crystal. It has been observed in several microgravity experiments for different semiconductor crystals. This work is concentrated on the growth of high resistivity (Cd, Zn) Te: In (CZT) crystals by achieving the phenomenon of dewetting under microgravity condition and its application in the processing of CZT detectors. Two Cd0.9Zn0.1Te In crystals were grown in space on the Russian FOTON satellite in the POLIZON-M facility in September 2007 (mission M3). At the end of the preliminary melting phase of one crystal, a Rotating Magnetic Field (RMF) was applied in order to reduce the typical tellurium clusters within the melt before the pulling. The other crystal was superheated with 20 K above the melting point before the pulling. A third reference crystal has been grown on the ground in similar thermal conditions. Profiles measurements of the space grown crystals surface gave the evidence of a successful dewetting during the crystal growth. Characterization methods such as IR microscopy and CoReMa have been performed on the three crystals. CZT detectors have been processed from the grown part of the different crystals. The influence of the dewetting on the material quality and the detector properties completes the study.
DOI: 10.1109/TNS.2009.2019599
Subject CZT growth
CZT characterization
CZT detectors

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