PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Frigeri C., Attolini G., Bosi M., Pelosi C., Germini F. Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs: A Study by the Chemically Sensitive (200) Diffraction. In: Journal of the Electrochemical Society, vol. 156 (6) pp. H448 - H452. The Electrochemical Society, 2009.
 
 
Abstract
(English)
The chemically sensitive (200) diffraction in the dark field (DF) mode of transmission electron microscopy has been used to detect, identify, and evaluate the composition of the parasitic interlayer at the GaAs-on-InGaP interface in metallorganic vaporphase epitaxy =MOVPE InxGa1−xP/GaAs heterostructures. The latter were grown at 600C with no growth interruption. The composition range determined by =200 DF was further refined by using the X-ray diffraction result that the interlayer has a negative lattice mismatch to GaAs. The parasitic interlayer can be either GaAs0.45P0.55 or InxGa1−xAs1−yPy with 0≤x<0.069 and 0.55≤y<0.707. P/As intermixing and In segregation are assumed to drive the formation of the interlayer. The low In content in the quaternary is ascribed to the reduced In segregation at 600C. In segregation is likely favored by the tensile strain associated with the interlayer in its process of growth.
DOI: 10.1149/1.3111028
Subject III-V compounds
Interface
InGaP
TEM


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