Istituto dei materiali per l'elettronica ed il magnetismo     
Trevisi G., Seravalli L., Frigeri P., Prezioso M., Rimada Herrera J. C., Gombia E., Mosca R., Nasi L., Bocchi C., Franchi S. The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission. In: Microelectronics Journal, vol. 40 (3) pp. 465 - 468. Workshop on Recent Advances of Low Dimensional Structures and Devices (WRA-LDSD). B. Courtois (ed.). Elsevier, 2009.
We present a study on the effects of quantum dot coverage on the properties of InAs dots embedded in GaAs and in metamorphic In0.15Ga0.85As confining layers grown by molecular beam epitaxy on GaAs substrates. We show that redshifted emission wavelengths exceeding 1.3 mm at room temperature were obtained by the combined use of InGaAs confining layers and high quantum dot coverage. The use of high InAs coverage, however, leads to detrimental effects on the optical and electrical properties of the structures. We relate such behaviour to the formation of extended structural defects originating from relaxed large-sized quantum dots that nucleate in accordance to thermodynamic equilibrium theories predicting the quantum dot ripening. The effect of the reduced lattice-mismatch of InGaAs metamorphic layers on quantum dot ripening is discussed in comparison with the InAs/GaAs system.
URL: http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6V44-4T13JH2-3&_user=6689909&_rdoc=1&_fmt=&_orig=search&_sort=d&view=c&_acct=C000061181&_version=1&_urlVersion=0&_userid=6689909&md5=7684ba011cc448cdbc870ce4e78d973e
DOI: 10.1016/j.mejo.2008.06.015
Subject Quantum dots
Long wavelength emission
Molecular beam epitaxy
Quantum dot ripening

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