PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Yildiz A., Lisesivdin S., Kasap M., Bosi M. Anomalous temperature dependence of the electrical resistivity in InGaN. In: Solid State Communications, vol. 149 pp. 337 - 340. Pergamon-Elsevier Science Ltd, 2009.
 
 
Abstract
(English)
Resistivity and Hall effect measurements on n-type undoped In0.17 Ga0.83 N alloy grown by metal-organic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15–350 K). In0.17 Ga0.83 N alloy is regarded as a highly degenerate semiconductor system with a high carrier concentration of ∼9.2×10^19 cm−3. An anomalous resistivity behavior is observed over the whole temperature range. The temperature dependent resistivity of In0.17 Ga0.83 N exhibits a metal-semiconductor transition (MST) around 180 K. The temperature coefficient of resistivity is negative at low temperatures (T<180) and it becomes positive at relatively high temperatures (T>180). In addition to this, a negative magnetoresistivity (MR) has been observed below 180 K. The temperature dependent resistivity of In0.17 Ga0.83 N alloy is explained in the terms of the electron–electron interaction (EEI) and the weak localization (WL) phenomenon at low temperatures (T<180). At high temperatures (T>180) the temperature dependent resistivity obeys T2 law.
URL: http://www.elsevier.com/locate/ssc
DOI: 10.1016/j.ssc.2008.11.026
Subject InGaN
electronic transport
72.20.Fr
71.55.Eq


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