PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Pavesi M., Rossi F., Manfredi M., Salviati G., Meneghini M., Zanoni E. A new approach to correlate transport processes and optical efficiency in GaN-based LEDs. In: Journal of Physics D-Applied Physics, vol. 42 article n. 045110. IOP Publishing Ltd, 2009.
 
 
Abstract
(English)
Carrier injection and non-radiative processes are determinants of the optical efficiency of InGaN/GaN LEDs. Among transport mechanisms, tunnelling is crucial for device functioning, but other contributions can be decisive on a varying bias. It is not easy to identify the weights and roles of these terms by a simple current-voltage characterization, so it needs a careful investigation by means of complementary experimental techniques. The correlation between luminescence and microscopic transport processes in InGaN/GaN LEDs has been investigated by means of a set of techniques: electroluminescence, cathodoluminescence, current-voltage dc measurements and thermal admittance spectroscopy. Green and blue LEDs, designed with a multi-quantum-well injector layer and an optically active single-quantum-well, have been tested. They showed distinctive current and temperature dependences of the optical efficiency, with a better performance at room temperature observed for green devices. This was discussed in terms of the carrier injection efficiency controlled by electrically active traps. The comparative analysis of the optical and electrical experimental data comes in handy as a methodological approach to correlate the emission properties with the carrier injection mechanisms and to improve the functionality in a large number of quantum well heterostructures for lighting applications.
Abstract
(Italiano)
vedi abstract inglese
URL: http://stacks.iop.org/JPhysD/42/045110
DOI: 10.1088/0022-3727/42/4/045110
Subject Light Emitting Diodes
GaN


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