Istituto dei materiali per l'elettronica ed il magnetismo     
Attolini G., Bosi M., Watts B. E., Besagni T., Ferrari C., Frigeri C., Rossi F., Kaciulis S., Pandolfi L., Martinez O. Growth of 3C Silicon Carbide on Silicon by MOCVD II. Rapporto interno n. 117. Technical report, 2007.
An apparatus for the growth of silicon carbide has been completed and tested. described in previous internal reports. This report describes the use of the growth runs carried out using dilute silane and propane as precursors. Some experience has been gained in the effects of growth parameters (temperature, pressure and carbon:silicon precursor ratio) and these experiments are summarised in detail. The characterisation methods used, particularly Raman spectroscopy, are described. The discussion attempts to rationalise the growth conditions and establish an optimum growth process. Moreover, defects that appear during growth, notably wafer bending and voids, are illustrated and hypotheses are proposed to account for their appearance.
Subject Silicon carbide
Raman spectroscopy

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