PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Ferrari C. Rendiconto attivitą anno 2007 del progetto "Growth and characterization of luminescent materials and devices for optoelectronic and thermofotovoltaic applications" tra IMEM-CNR, Universitą Roma 3 e LSSMS dell'Universitą di Nanchino. Growth and characterization of luminescent materials and devices for optoelectronic and thermofotovoltaic applications. Project report 3, 2008.
 
 
Abstract
(English)
Germanium based photovoltaic cells. Germanium based homoepitaxial structures are studied in order to realize photovoltaic cells with the maximum efficiency in the infrared range at energies of approximately 0.8 eV. Our approach is to use epitaxial techniques to obtain sharp interfaces between the different doping zones of the device instead of using the less reliable dopant diffusion process. The epitaxial approach can be cost effective for large volume productions. Several germanium homoepitaxial Ge/Ge structures have been deposited on p-type Ge substrates by using Metal-Organic Vapour Phase Epitaxy (MOVPE) at temperatures ranging from 500 to 600°C using Iso-Buthyl-Germane (iBuGe) as metal-organic precursor and hydrogen as carrier gas. Characterization of selective emitters. Samples of Yttrium Aluminum Garnet (YAG) and Erbium Aluminum Garnets (ErAG) were sinterized and deposited on a texture of Nextel fibers resistant to high temperature. Using cathodoluminescence technique the IR emission under the electron beam excitation has been studied. The spectra of the sample are reported in Fig. 9. The spectra obtained match well with the bandgap 0.67 eV of the Ge/Ge epitaxial layer to be used as photovoltaic device.
Subject Attivitą di riucerca riguardante lo sviluppo di celle fotovoltaiche basate su germanio per l'applicazione in dispositivi fotovoltaici e termofotovoltaici


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