Istituto dei materiali per l'elettronica ed il magnetismo     
Csik A., Serényi M., Erdélyi Z., Nemcsics A., Cserhati C., Langer G. A., Beke D. L., Frigeri C., Simon A. Investigation of Thermal Stability of H-Si/Ge Multilayers. In: JVC-12 - JVC-12, 12th Joint Vacuum Conference (Balatonalmádi (H), 22-26 Sept. 2008). Abstract, pp. 45 - 45. Roland Eötvös Physical Society (REPS) (ed.). REPS, 2008.
Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-Ray Diffraction (SAXRD). Amorphous H-Si/Ge multilayers were prepared by RF sputtering with 1,5 and 6 ml/min H2 flow-rate. After preparation the hydrogen content of the samples were checked by RBS. It is shown that the hydrogen concentration increased by increasing flow-rate. Annealing of the samples was carried out at 400 and 450 oC for several hours. It has been observed that sample prepared with 6 ml/min flow-rate at both annealed temperatures underwent significant structural changes: the surface of the samples was visibly roughened, gas bubbles were formed and craters were created. The decay of the periodic structure of Si and Ge layers in these types of multilayers was faster then in not hydrogenated samples. Samples prepared with 1,5 ml/min flow-rate have similar behaviour at 450 oC, but at 400 oC the decay of the first order SAXRD peaks was slower then in the not-hydrogenated multilayers. Qualitatively the observed behavior can be explained by the fast desorption of the saturated hydrogen, leading to formation of bubbles and craters, as well as, at 400oC in the sample with lower H-content, by the possible passivation of the dangling bonds resulting in a slowing down of the diffusion intermixing
Subject Amorphous multilayers

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