Istituto dei materiali per l'elettronica ed il magnetismo     
Zappettini A., Zha M., Marchini L., Calestani D., Mosca R., Gombia E., Zanichelli M., Pavesi M., Auricchio N. Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material. In: RTSD 2008 - 16th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray Detectors (Dresden (Germany), 19-25 Ottobre 2008).
In this work, the growth of CdZnTe 2-inches crystals by the Boron Oxide Vertical Bridgman Technique is reported. A thin boron oxide layer fully encapsulates the growing crystals, thus preventing a direct crystal-crucible interaction.
Subject CdZnTe, X-ray detectors

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