PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Bertelli M., Loeptien P., Malindretos J., Wenderoth M., Ulbrich R., Rizzi A., Righi M., Catellani A. Atomic and electronic structure of the non-polar GaN(1-100) surface. In: DPG - Berlin 2008: Surface Science Division (DPG) (Berlin (DE), 25 - 29 Febbraio 2008).
 
 
Abstract
(English)
Cross-section scanning tunneling microscopy (STM) and scanning tunnelling spectroscopy (STS) have been performed on the non-polar GaN(1100) surface (m-plane). The unintentionally n-doped GaN(0001) samples were thinned down to ∼100 μm , cleaved along the m-plane in ultra high vacuum and measured in-situ by STM at room temperature. The experimental empty state topographies collected with sample bias from +2.9 V to +4.0 V show an unreconstructed surface. First principle DFT-LDA calculations of the surface electronic properties were performed. In agreement with experiment, the calculations predict a relaxed surface but no reconstruction. Two surface bands appear inside the semiconductor band gap at the borders of the surface Brillouin zone, one empty band localized on the Ga-atoms and one filled band on the N-atoms. Up to now this theoretical prediction has not been confirmed by the STS experiment.
Subject STM


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