Istituto dei materiali per l'elettronica ed il magnetismo     
Grillo V., Rossi F., Armani N., Yamamoto N., Salviati G. Simulation of the cathodoluminescence processes in semiconductors. G. Salviati, T. Sekiguchi, S. Heun and A. Gustafsson, Eds (eds.). Trivandrum-695 023, Kerala, India: Research Signpost, T. C., 2008.
This article reviews most of the approaches and techniques that have been used to solve the problem of simulating the cathodoluminescence processes in semiconductors. If semi-quantitative information is to be extracted, injection and diffusion of the charge carriers and detection of the emitted light need to be correctly accounted for. The article covers, in particular, the problem of the minority carriers diffusion in the different experimental situations. In spite of a large number of satisfactory results for specific problems and experiments, the correct modelling of the diffusion, trapping, radiative and non-radiative recombination of the carriers in a more general case is usually difficult to achieve. For this reason, the article tries to underline the advantage of a random walk approach for the simulation of diffusion processes in all kinds of geometries and experimental simulation. In particular, the random walk simulation software ALLES (ALeatory Light from Electrons: Simulation) is also briefly described along with applications to specific problems in semiconducting systems of interest.
Subject Cathodoluminescence (CL) technique

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