Istituto dei materiali per l'elettronica ed il magnetismo     
Fabbri F., Cavallini A., Attolini G., Rossi F., Salviati G., Dierre B., Fukata N., Sekiguchi T. Cathodoluminescence characterization of Β-SiC nanowires and surface-related silicon dioxide. In: Materials Science in Semiconductor Processing, vol. 11 (5) pp. 179 - 181. E-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS. Elsevier, 2008.
The maing oal of our study is to prepare and to understand the properties of cubic SiC nanowires (NWs)and to characterize its native silicon dioxide. The wires, with diameters ranging from 10 nm to 2 um, have been prepared by a CVD process on Si (001)substrates, using CO as the carbon source and Ni as the catalyst. A structural and optical analysis, by means of TEM, micro-Raman and cathodoluminescence(CL) spectroscopy,has been performed. Two sets of samples have been studied, labelled A and B,which differ for growth process conditions. Set A showed two broad CL peaks. Set B showed a much weaker CL emission. This difference has been explained by means of TEM investigation and micro-Raman spectra: set A shows a thick amorphous silicon dioxide layer on the wire surface,whereas set B shows a thin or absent oxide layer. Consequently,the nature of the CL emission has to be ascribed mainly to oxide-related recombination.
vedi abstract inglese
URL: http://www.elsevier.com/locate/mssp
DOI: 10.1016/j.mssp.2008.10.004
Subject SiC, nanowires

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