Istituto dei materiali per l'elettronica ed il magnetismo     
Zappettini A., Zha M., Marchini L., Calestani D., Mosca R., Gombia E., Zanotti L., Zanichelli M., Pavesi M., Auricchio N., Caroli E. Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material. In: Proceedings of the Ieee, pp. 118 - 121. 2008 IEEE Nuclear Science Symposium Conference Record - Dresden, Germany (19-25 Oct. 2008). IEEE, 2008.
CdZnTe crystals doped with indium were grown by the boron oxide vertical Bridgman technique, with a diameter of 2-inches. The crystals showed large single crystalline yield and low etch pit density. The background impurity content was dominated by boron in concentration lower than 1 ppm. High resistivity was obtained and a procedure for contact preparation was developed. The mobility-lifetime product of the material was determined by both X-ray irradiation and photocurrent spectroscopy. The X-ray detector prepared with this material showed good spectroscopic characteristics.
DOI: 10.1109/NSSMIC.2008.4775136
Subject CdZnTe

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