Istituto dei materiali per l'elettronica ed il magnetismo     
Ferrari C., Bosi M., Attolini G., Frigeri C., Gombia E., Pelosi C., Arumainathan S., Musayeva N. Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications. In: Proceedings of the Ieee, vol. ASDAM 2008 pp. 307 - 310. Institute of Electrical and Electronics Engineeres, Inc, 2008.
In the present work we report the results of characterization of epitaxial Ge/Ge layers using vapour phase epitaxy using either only isobutilgermane as a precursor or adding doses of AsH3 as surfactant to obtain a better surface morphology. When iBuGe partial pressure was below 410-6, the Ge layers showed good morphology and crystallographic quality with best results on samples grown on exactly oriented (001) Ge substrates. The use AsH3 as surfactant permitted to increase the iBuGe partial pressure used in the growth without degrading the layer properties, even if TEM revealed the presence of an high defect density at the interface. It was concluded that the surfactant, even if reported as
DOI: 10.1109/ASDAM.2008.4743344
Subject Characterization

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