Istituto dei materiali per l'elettronica ed il magnetismo     
Watts B. E., Attolini G., Bosi M., Frigeri C. A novel mechanism to explain wafer bending during the growth of SiC films on Si. In: Materials Letters, vol. 62 pp. 2133 - 2135. Elsevier B.V, 2008.
Wafer bending is a serious problem that affects the growth of cubic silicon carbide on silicon. Thermal and lattice mismatch are often cited as the causes of stress in this system, but they alone cannot account for severe wafer warp seen in many cases. This work proposes diffusion-induced stress as a new mechanism that can explain the extreme degree of bending observed.
URL: http://www.elsevier.com/locate/matlet
DOI: 10.1016/j.matlet.2007.11.066
Subject Characterization
Epitaxial growth of SiC
IV-IV compounds

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