PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Ghiraldelli E., Pelosi C., Gombia E., Chiavarotti G., Vanzetti L. ALD growth, thermal treatments and characterisation of Al2O3 layers. In: Thin Solid Films, vol. 517 pp. 434 - 436. Elsevier B.V, 2008.
 
 
Abstract
(English)
Al2O3 films with thickness ranging from 20 to 300 nm are grown in a home-made reactor using atomic layer deposition with trimethylaluminum and water on different semiconductor substrates. The deposited films are investigated in terms of composition and electrical properties. Annealing treatments appear necessary in order to obtain films with good insulating properties, although the same treatments do not affect the stoichiometry of the main components.
URL: http://www.elsevier.com/locate/tsf
DOI: 10.1016/j.tsf.2008.08.052
Subject Al2O3
High K dielectric
C-V measurements
77.55.+f
77.22.-d


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