PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Frigeri C., Serényi M., Csik A., Erdélyi Z., Beke D. L., Nasi L. Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments. In: Journal of Materials Science-Materials in Electronics, vol. 19 pp. S289 - S293. Springer, 2008.
 
 
Abstract
(English)
A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the asdeposited multilayer except for the less severe conditions here applied (150 C, time22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface degradation in the shape of bumps and craters. They are argued to be due to the formation of H bubbles upon heating. Hydrogen should be mostly released from the amorphous Ge layers.
URL: http://www.springerlink.com/content/b52g523130155684/?p=ec107fe2ea70457cacc33ba327a871b3&pi=3
DOI: 10.1007/s10854-007-9510-3
Subject Characterization
Amorphous multilayers
Si/Ge
Nanostructures


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