Istituto dei materiali per l'elettronica ed il magnetismo     
Frigeri C., Attolini G., Bosi M., Watts B. E. Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivity. In: Journal of Materials Science-Materials in Electronics, vol. 19 pp. S303 - S306. Springer, 2008.
Cubic SiC layers grown by VPE on n-type, p-type or semi-insulating Si substrates have been characterized as regards the formation of voids in the Si substrate, namely pyramidal voids and micropipes. The former have been detected in n-type substrates, the latter in p-type and semi-insulating substrates. The total empty volume of the pyramidal voids is higher than that of the micropipes suggesting that the probability of Si out-diffusion is higher in the n-type Si substrates. The results are discussed in terms of the influence of the Fermi level on the diffusivity of the Si atoms and their out-diffusion from the substrate.
URL: http://www.springerlink.com/content/x438710347x30001/
DOI: 10.1007/s10854-008-9684-3
Subject characterization

Icona documento 1) Download Document PDF

Icona documento Open access Icona documento Restricted Icona documento Private


Per ulteriori informazioni, contattare: Librarian http://puma.isti.cnr.it

Valid HTML 4.0 Transitional