Istituto dei materiali per l'elettronica ed il magnetismo     
Bosi M., Attolini G., Ferrari C., Frigeri C., Rimada Herrera J. C., Gombia E., Pelosi C., Peng R. MOVPE growth of homoepitaxial germanium. In: Journal of Crystal Growth, vol. 310 (14) pp. 3282 - 3286. Elsevier, 2008.
n-Type Ge epitaxial layers were deposited on p-type Ge substrates by means of metal-organic vapour phase epitaxy (MOVPE) at temperatures ranging from 500 to 600 C using isobutylgermane (iBuGe) as metal-organic precursor and hydrogen as carrier gas. The samples were grown at different iBuGe partial pressure conditions and were characterised by means of atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy. The layers grown with iBuGe partial pressure of 3.310−6 bar at 550 C show a good crystallographic structure, flat surface and a good interface with the substrate, while for lower partial pressures a series of pits was evidenced on the layer. The pit density was found to be dependent on the growth rate. n-Ge/p-Ge diodes, obtained with standard photolitographic techniques, show rectification ratios higher than 105 and ideality factors in the 1.0081.010 range.
URL: http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4S80XPG-4&_user=10&_rdoc=1&_fmt=&_orig=search&_sort=d&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=fa545d5ad6b71c4780ecd65cac40d6bd#aff2
DOI: 10.1016/j.jcrysgro.2008.04.009
Subject Characterisation, Metal-organic vapour phase epitaxy, MOVPE, Semiconducting germanium, Ge
81.05.Cy; 81.15.Gh

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