PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Nasi L., Bocchi C., Germini F., Prezioso M., Gombia E., Mosca R., Frigeri P., Trevisi G., Seravalli L., Franchi S. Defects in nanostructures with ripened InAs/GaAs quantum dots. In: Journal of Materials Science-Materials in Electronics, vol. 19 (1) pp. S96 - S100. Springer New York, 2008.
 
 
Abstract
(English)
InAs/GaAs quantum dot (QD) structures were grown by molecular beam epitaxy (MBE) with InAs coverages θ continuously graded from 1.5 ML to 2.9 ML. A critical coverage of 2.23 ML is found, above which the islands undergo ripening, which causes a fraction of quantum dots to increase in size and to eventually relax through the formation of pure, edge-type misfit dislocations which propagate towards the surface in the form of V-shaped defects. Concomitant with ripening, extended-defect related traps with activation energies of 0.52 and 0.84 eV were observed, and regarded as the cause of the significant worsening of the optical and electrical properties in high coverage structures. Their relationship with the observed dislocations is discussed.
URL: http://www.springerlink.com/content/r348n88t0702056t/?p=19be7ddf279443dcb03a26084b77be4a&pi=2
DOI: 10.1007/s10854-008-9657-6
Subject MBE growth
InAs/GaAs Quantum Dots
Defects
Ripening


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