Istituto dei materiali per l'elettronica ed il magnetismo     
Seravalli L., Frigeri P., Trevisi G., Franchi S. 1.59 Ám room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates. In: Applied Physics Letters, vol. 92 article n. 213104. AIP, 2008.
We present design, preparation by molecular beam epitaxy, and characterization by photoluminescence of long-wavelength emitting, strain-engineered quantum dot nanostructures grown on GaAs, with InGaAs confining layers and additional InAlAs barriers embedding InAs dots. Quantum dot strain induced by metamorphic lower confining layers is instrumental to redshift the emission, while a-few-nanometer thick InAlAs barriers allow to significantly increase the activation energy of carriers' thermal escape. This approach results in room temperature emission at 1.59 Ám and, therefore, is a viable method to achieve efficient emission in the 1.55 Ám window and beyond from quantum dots grown on GaAs substrates.
DOI: 10.1063/1.2937095
Subject III-V semiconductors
molecular beam epitaxial growth
semiconductor quantum dots

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