Istituto dei materiali per l'elettronica ed il magnetismo     
Dediu V., Hueso L. E., Bergenti I., Riminucci A., Borgatti F., Graziosi P., Newby C., Casoli F., De Jong M. P., Taliani C., Zhan Y. Room-temperature spintronic effects in Alq3-based hybrid devices. In: Physical Review B, vol. 78 article n. 115203. The American Physical Society, 2008.
We report on efficient spin polarized injection and transport in long (10^2 nm) channels of Alq3 organic semiconductor. We employ vertical spin valve devices with a direct interface between the bottom manganite electrode and Alq3, while the top-electrode geometry consists of an insulating tunnel barrier placed between the "soft" organic semiconductor and the top Co electrode. This solution reduces the ubiquitous problem of the so-called ill-defined layer caused by metal penetration, which extends into the organic layer up to distances of about 50-100 nm and prevents the realization of devices with well-defined geometry. For our devices the thickness is defined with an accuracy of about 2.5 nm, which is near the Alq3 molecular size. We demonstrate efficient spin injection at both interfaces in devices with 100- and 200-nm-thick channels. We solve one of the most controversial problems of organic spintronics: the temperature limitations for spin transport in Alq3-based devices. We clarify this issue by achieving room-temperature spin valve operation through the improvement of spin injection properties of both ferromagnetic/Alq3 interfaces. In addition, we discuss the nature of the inverse sign of the spin valve effect in such devices proposing a mechanism for spin transport.
URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=PRBMDO000078000011115203000001&idtype=cvips&gifs=yes
DOI: 10.1103/PhysRevB.78.115203
Subject 72.25.-b

Icona documento 1) Download Document PDF

Icona documento Open access Icona documento Restricted Icona documento Private


Per ulteriori informazioni, contattare: Librarian http://puma.isti.cnr.it

Valid HTML 4.0 Transitional