Istituto dei materiali per l'elettronica ed il magnetismo     
Zha M., Zappettini A., Calestani D., Marchini L., Zanotti L., Paorici C. Full encapsulated CdZnTe crystals by the vertical Bridgman method. In: Journal of Crystal Growth, vol. 310 pp. 2072 - 2075. the Proceedings of the 15th International Conference on Crystal Growth (ICCG-15) in conjunction with the International Conference on Vapor Growth and Epitaxy and the US Biennial Workshop on Organometallic Vapor Phase Epitaxy Salt Lake City, Utah, US 12-17 August 2007 Edited by Tom F. Kuech, Susan E. Babcock, Rajaram Bhat and Catherine Caneau. Elsevier B.V, 2008.
CdZnTe crystals were grown by the vertical Bridgman technique using boron oxide for preventing material decomposition. The experiments show that a boron oxide layer completely encapsulates the crystal during growth, so that the crystal grows without direct contact with the crucible. The origins of this effect are investigated. In this work it is shown that boron oxide and quartz create a mixing layer at high temperature. This layer explains the reason for the good wetting of the quartz crucible by boron oxide.
URL: http://10.1016/j.jcrysgro.2007.11.230
DOI: 10.1016/j.jcrysgro.2007.11.230
Subject Bridgman technique
Semiconducting II-VI materials
81.05.Dz II-VI semiconductors
81.10.Fq Growth from melts; zone melting and refining
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

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