Istituto dei materiali per l'elettronica ed il magnetismo     
Zappettini A., Spano N., Mazzera M., Guadalupi G., Paorici C. Off-stoichiometry determination of II-VI bulk crystals. In: Journal of Crystal Growth, vol. 310 pp. 2080 - 2084. Elsevier B.V, 2008.
The measurement of impurity concentration in compound semiconductors reaches extremely high sensitivity. On the contrary, the methods for off-stoichiometry determination in II-VI crystals are not satisfactory. Some of the authors developed (in the past) a method for determining the off-stoichiometry in CdTe crystals measuring the high-temperature optical densities of vapors in equilibrium with solid samples. Thanks to accurate calibrations, the partial pressure of the vapor/solid systems could be derived and exploited to evaluate the sample off-stoichiometry. In the present work, the calibration procedures are shown for the determination of partial pressure for sulfides and selenides. The off-stoichiometry is derived for ZnTe, CdS and CdSe samples and the method effectiveness is confirmed.
URL: http://10.1016/j.jcrysgro.2007.11.232
DOI: 10.1016/j.jcrysgro.2007.11.232
Subject Characterization
Phase equilibria
Semiconducting II-VI materials
81.05.Dz II-VI semiconductors
81.30.Dz Phase diagrams of other materials (for phase diagrams of superconductors, see 74.25.Dw)
81.70.Jb Chemical composition analysis, chemical depth and dopant profiling

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