PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Pavesi M., Manfredi M., Rossi F., Meneghini M., Meneghesso G., Zanoni E. Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes. In: Journal of Applied Physics, vol. 103 (2) article n. 024503. American Institute of Physics, 2008.
 
 
Abstract
(English)
The presence of traps is sometimes favorable, and sometimes detrimental to the electrical transport and optical efficiency in III-nitride quantum heterostructures. This work presents the results of a joint analysis of electrical features and electroluminescence in InGaN/GaN-based blue light emitting diodes; a detailed and exhaustive reading of the carrier injection mechanisms highlights the central role of trap centers near the active region. Some suggestions will be eventually advanced as to the design of devices with better emission performances.
URL: http://link.aip.org/link/?JAPIAU/103/024503/1
DOI: 10.1063/1.2831226
Subject charge injection
electroluminescence
gallium compounds
III-V semiconductors
indium compounds
light emitting diodes
tunneling
wide band gap semiconductors
85.60.Jb Light-emitting devices


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