Istituto dei materiali per l'elettronica ed il magnetismo     
Zappettini A., Zha M., Pavesi M., Zanotti L. Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique. In: Journal of Crystal Growth, vol. 307 pp. 283 - 288. Elsevier BV, 2007.
One of the main problems affecting the vertical Bridgman growth of CdZnTe crystals is the crystalcrucible contact. In this work, is shown that it is possible to avoid this interaction by inserting a stable liquid boron oxide layer between the crucible and the melt. This layer improves the structural properties of the grown crystals, reducing the etch pit density to the 103 cm-3 range. The possible origins for the formation of a stable boron oxide layer are discussed.
DOI: 10.1016/j.jcrysgro.2007.07.012
Subject CdZnTe
crystal growth

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