Istituto dei materiali per l'elettronica ed il magnetismo     
Bellani V., Bocchi C., Ciabattoni T., Franchi S., Frigeri P., Galinetto P., Geddo M., Germini F., Guizzetti G., Nasi L., Patrini M., Seravalli L., Trevisi G. Residual strain measurements in InGaAs metamorphic buffer layers on GaAs. In: European Physical Journal B, vol. 56 (3) pp. 217 - 222. SPRINGER, 233 SPRING STREET, NEW YORK, NY 10013 USA, 2007.
This work deals with the strain relaxation mechanism in InGaAs metamorphic buffers (MBs) grown on GaAs substrates and overgrown by InAs quantum dots (QD). The residual strain is measured by using Raman scattering and X-ray diffraction, both in Reciprocal Space Map and in single ω − 2θ scan modes (ω and θ being the incidence angles on the sample surface and on the scattering planes, respectively). By relating the GaAs-like longitudinal optical phonon frequency ωLO of InGaAs MBs to the in-plane residual strain ε measured by means of photoreflectance (PR), the linear ε-vs.-ωLO working curve is obtained. The results of Raman and XRD measurements, as well as those obtained by PR, are in a very satisfactory agreement. The respective advantages of the techniques are discussed. The measurements confirm that strain relaxation depends on the thickness t of the buffer layer following a t− 1/2 power law, that can be explained by an energy-balance model.
URL: http://www.springerlink.com/content/50p64l5505357054/
DOI: 10.1140/epjb/e2007-00105-8
Subject 78.30.Fs III-V and II-VI semiconductors
61.10.-i X-ray diffraction and scattering
71.70.Fk Strain-induced splitting

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