Istituto dei materiali per l'elettronica ed il magnetismo     
Attolini G., Bosi M., Watts B. E., Leccabue F., Besagni T., Salviati G., Frigeri C., Ferrari C., Kaciulis S., Pandolfi L. Growth of 3C Silicon Carbide on Silicon by MOCVD 1. Rapporto interno n. 111. Technical report, 2006.
The physical properties of silicon carbide make it a material of great interest in microelectronics. This Internal Report describes the first stages in the operation of a new apparatus for the chemical vapour deposition of silicon carbide on silicon. The growth methodology is described, including deoxidation, thermal treatment, carbonisation and SiC film growth. The characterisation techniques (SEM, TEM, XPS, electrical measurements, reflectivity and AFM) are described. The experiments are mainly limited to films grown using pure silane and propane as precursors. These have been used to set up the MOCVD apparatus and establish the growth procedure. The typical features of 3C-SiC have been observed notably the texture, defects, surface composition and morphology. Finally, some basic considerations about the growth method and recommendations regarding the experimental procedure are made.
Subject MOCVD

Icona documento 1) Download Document PDF

Icona documento Open access Icona documento Restricted Icona documento Private


Per ulteriori informazioni, contattare: Librarian http://puma.isti.cnr.it

Valid HTML 4.0 Transitional