PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Rossi F., Pavesi M., Meneghini M., Salviati G., Manfredi M., Meneghesso G., Castaldini A., Cavallini A., Rigutti L., Strass U., Zehnder U., Zanoni E. Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes. In: Journal of Applied Physics, vol. 99 (5) article n. 053104. AIP, 2006.
 
 
Abstract
(English)
This work describes an experiment on degradation mechanisms of InGaN light-emitting diode (LED) test structures which do not fulfill the requirements of longlife products. We present a combined capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), electroluminescence (EL), and cathodoluminescence (CL) study of short-term instabilities of InGaN/GaN LEDs submitted to low current aging tests at room temperature. In the early stages of the aging tests, the EL and CL characterizations showed an optical power decrease, more prominent at low current levels. The C-V profiles indicated that the stress induced an apparent charge increase, well related to the deep level changes detected by DLTS and to the optical power decrease. It is supposed that the main cause of the degradation is the generation of nonradiative paths, due to the generation/propagation of defects activated by carrier transport.
URL: http://jap.aip.org/resource/1/japiau/v99/i5/p053104_s1
DOI: http://dx.doi.org/10.1063/1.2178856
Subject 85.60.Jb


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