Istituto dei materiali per l'elettronica ed il magnetismo     
Rohr C., Abbott P., Ballard I., Connolly J., Barnham K., Mazzer M., Button C., Nasi L., Hill G., Roberts J. S., Clarke G., Ginige R. InP-based lattice-matched InGaAsP and strain-compensated InGaAs/InGaAs quantum well cells for thermophotovoltaic applications. In: Journal of Applied Physics, vol. 100 (11) article n. 114510. American Institute of Physics, 2006.
Quantum well cells (QWCs) for thermophotovoltaic (TPV) applications are demonstrated in the InGaAsP material system lattice matched to the InP substrate and strain-compensated InGaAs/InGaAs QWCs also on InP substrates. We show that lattice-matched InGaAsP QWCs are very well suited for TPV applications such as with erbia selective emitters. QWCs with the same effective band gap as a bulk control cell show a better voltage performance in both wide and erbialike emission. We demonstrate a QWC with enhanced efficiency in a narrow-band spectrum compared to a bulk heterostructure control cell with the same absorption edge. A major advantage of QWCs is that the band gap can be engineered by changing the well thickness and varying the composition to the illuminating spectrum. This is relatively straightforward in the lattice-matched InGaAsP system. This approach can be extended to longer wavelengths by using strain-compensation techniques, achieving band gaps as low as 0.62 eV that cannot be achieved with lattice-matched bulk material. We show that strain-compensated QWCs have voltage performances that are at least as good as, if not better than, expected from bulk control cells.
URL: http://jap.aip.org/resource/1/japiau/v100/i11/p114510_s1
DOI: http://dx.doi.org/10.1063/1.2398466
Subject 73.50.Pz

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