Istituto dei materiali per l'elettronica ed il magnetismo     
Musayeva N., Attolini G., Bosi M., Pelosi C. MOVPE Growth and Characterization of Diluted iiI-V Nitrides for Optoelectronic and Electronic Devices. Rapporto interno n. 109. Technical report, 2005.
Semiconductor alloys Ga(A1)InP and Ga(A1)InAs are currently attracting significant attention: intensive experimental [1-11] and theoretical [12-16] efforts have recently been directed towards the understanding of the properties of group III-V alloys in which the group V element is partially replaced by nitrogen. It has been found that the incorporation of a low concentration of Nitrogen has an important effect on the electronic properties of these materials (fig. 1). A reduction of the band gap exceeding 0.1 eV per atomic percent of N content was observed in GaNxAs1-x, for x< 0.015 [l]. This discovery has opened an interesting possibility of using N containing alloys InGaPN and InGaAsN for long wavelength optoelectronic devices. In fact 1.3 and 1.55 um InGaAsN/GaAs quantum well (QW) lasers have been reported as light sources for optical fiber communications [17-19]. Such lasers are expected to have an improved thermal stability as compared to the common InGaAsP/InP lasers based on InP substrate, due to the large conduction band offset of InGaAsN/GaAs heterostructures. This material system is also an ideal candidate for Vertical Cavity Surface Emitting Laser (VCSEL) applications...
Subject MOVPE growth
MBE growth

Icona documento 1) Download Document PDF

Icona documento Open access Icona documento Restricted Icona documento Private


Per ulteriori informazioni, contattare: Librarian http://puma.isti.cnr.it

Valid HTML 4.0 Transitional