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Istituto dei materiali per l'elettronica ed il magnetismo     
Musayeva N., Attolini G., Bosi M., Pelosi C. MOVPE Growth and Characterization of Diluted iiI-V Nitrides for Optoelectronic and Electronic Devices. Rapporto interno n. 109. Technical report, 2005.
 
 
Abstract
(English)
Semiconductor alloys Ga(A1)InP and Ga(A1)InAs are currently attracting significant attention: intensive experimental [1-11] and theoretical [12-16] efforts have recently been directed towards the understanding of the properties of group III-V alloys in which the group V element is partially replaced by nitrogen. It has been found that the incorporation of a low concentration of Nitrogen has an important effect on the electronic properties of these materials (fig. 1). A reduction of the band gap exceeding 0.1 eV per atomic percent of N content was observed in GaNxAs1-x, for x< 0.015 [l]. This discovery has opened an interesting possibility of using N containing alloys InGaPN and InGaAsN for long wavelength optoelectronic devices. In fact 1.3 and 1.55 um InGaAsN/GaAs quantum well (QW) lasers have been reported as light sources for optical fiber communications [17-19]. Such lasers are expected to have an improved thermal stability as compared to the common InGaAsP/InP lasers based on InP substrate, due to the large conduction band offset of InGaAsN/GaAs heterostructures. This material system is also an ideal candidate for Vertical Cavity Surface Emitting Laser (VCSEL) applications...
Subject MOVPE growth
MBE growth


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