Istituto dei materiali per l'elettronica ed il magnetismo     
Seravalli L., Frigeri P., Minelli M., Allegri P., Avanzini V., Franchi S. Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 µm. In: Applied Physics Letters, vol. 87 (6) article n. 063101. American Institute of Physics, 2005.
We designed and prepared by molecular beam epitaxy strain-engineered InAs/InGaAs/GaAs quantum dot (QD) nanostructures where we separately controlled: (i) the mismatch f between QDs and confining layers (CLs), and, then, the QD strain, by changing the thickness of a partially relaxed InGaAs lower CL and (ii) the CL composition x. The appropriate values of f and x to tune the emission energies at wavelengths in the 1.3-1.55 μm range were calculated by means of a simple model. Comparing model calculations and activation energies of photoluminescence quenching, we also concluded that quenching is due to both intrinsic and extrinsic processes; we show that the structures can be designed so as to maximize the activation energy of the intrinsic process, while keeping the emission energy at the intended value in the 1.3-1.55 μm range.
URL: http://apl.aip.org/resource/1/applab/v87/i6/p063101_s1
DOI: 10.1063/1.2007860
Subject MBE growth
Quantum Dot

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