PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Tsormpatzoglou A., Hastas N., Tassis D., Dimitriadis C., Kamarinos G., Frigeri P., Franchi S., Gombia E., Mosca R. Low-frequency noise spectroscopy in Au/n-GaAs Schottky diodes with InAs quantum dots. In: Applied Physics Letters, vol. 87 (16) article n. 163109. American Institute of Physics, 2005.
 
 
Abstract
(English)
The temperature dependence of low-frequency noise in Au/n-GaAs Schottky diodes, with InAs quantum dots (QDs) embedded in the GaAs confining layers, is investigated in the temperature range of 77-298 K and at frequencies from 1 Hz to 5 kHz. Diodes prepared on samples with similar structure but without QDs exhibit 1/ f behavior. In diodes containing QDs, in addition to the 1/ f noise at low frequencies, generation-recombination (g-r) noise at higher frequencies was observed, related to single energy traps in the GaAs layer. Analysis of the experimental data has shown that the g-r noise is related to three traps with activation energies 0.234, 0.09 and 0.075 eV, corresponding to the ground and two excited confined states in the QDs.
URL: http://apl.aip.org/resource/1/applab/v87/i16/p163109_s1
DOI: 10.1063/1.2106000
Subject InAs quantum dots
Schottky barriers
low-frequency noise spectroscopy


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