Istituto dei materiali per l'elettronica ed il magnetismo     
Zappettini A., Bissoli F. Optical monitoring of partial vapor pressures in CdTe and CdZnTe systems: a new tool for material technology development. In: IEEE Transactions on Nuclear Science, vol. 52 (6) pp. 3079 - 3084. IEEE, 2005.
A technique for the determination of the partial pres- sures of Cd and Te􏰇 vapors in equilibrium with cadmium zinc tel- luride (CdZnTe) crystals has been developed. The technique has shown a large range of applicability. First of all, the technique can be used for the in-situ monitoring of the partial vapor pressures in the case of technological relevant processes, such as material pu- rification and crystal growth. Moreover, the technique is applied to the characterization of the composition of CdZnTe crystals with a sensitivity of at least two orders of magnitude more than previ- ously reported techniques.
URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1589324
DOI: 10.1109/TNS.2005.862914
Subject cadmium telluride, stoichiometry, vapor pressure monitoring

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