PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Mazzucato S., Nardin D., Capizzi M., Polimeni A., Frova A., Seravalli L., Franchi S. Defect passivation in strain engineered InAs/(InGa)As quantum dots. In: Materials Science & Engineering C-Biomimetic and Supramolecular Systems, vol. 25 (5-8) pp. 830 - 834. Current Trends in Nanoscience - from Materials to Applications Proceedings of the European Materials Research Society 2004 - Symposium G. Elsevier B.V, 2005.
 
 
Abstract
(English)
A series of InAs quantum dots (QDs) embedded in Inx Ga1-xAs confining layers with different In composition and thickness have been investigated by photoluminescence. An enhancement of the PL signal up to 25 times was obtained via hydrogen irradiation. It has been shown that two different non radiative channels account for the temperature dependence of the PL spectra in both as-grown and hydrogenated samples. In the latter samples, only a partial passivation of both type of defects, whose nature is discussed, has been achieved.
DOI: 10.1016/j.msec.2005.06.025
Subject InAs/GaAs Quantum Dots


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