Istituto dei materiali per l'elettronica ed il magnetismo     
Radhakrishnan J., Salviati G. Narrow, deep level cathodoluminescence emission from semi-insulating GaAs. In: Applied Physics Letters, vol. 84 (2) pp. 197 - 199. AIP, 2004.
Cathodoluminescence investigations on bulk undoped semi-insulating GaAs samples taken from different sources reveal the presence of a deep level emission at 0.9 eV at 77 K, with a narrow full width at half maximum of 8 meV. The temperature-dependent and beam-parameter-dependent studies indicate that, the probable origin for this emission may be some nanocluster/quantum-dot like structures with a band gap of 0.9 eV, present inside the semi-insulating GaAs crystal lattice. One possibility for such structures in semi-insulating GaAs are clusters/nanoprecipitates of arsenic.
URL: http://apl.aip.org/resource/1/applab/v84/i2/p197_s1
DOI: http://dx.doi.org/10.1063/1.1640471
Subject 78.60.Hk

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