PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Radhakrishnan J., Salviati G. Narrow, deep level cathodoluminescence emission from semi-insulating GaAs. In: Applied Physics Letters, vol. 84 (2) pp. 197 - 199. AIP, 2004.
 
 
Abstract
(English)
Cathodoluminescence investigations on bulk undoped semi-insulating GaAs samples taken from different sources reveal the presence of a deep level emission at 0.9 eV at 77 K, with a narrow full width at half maximum of 8 meV. The temperature-dependent and beam-parameter-dependent studies indicate that, the probable origin for this emission may be some nanocluster/quantum-dot like structures with a band gap of 0.9 eV, present inside the semi-insulating GaAs crystal lattice. One possibility for such structures in semi-insulating GaAs are clusters/nanoprecipitates of arsenic.
URL: http://apl.aip.org/resource/1/applab/v84/i2/p197_s1
DOI: http://dx.doi.org/10.1063/1.1640471
Subject 78.60.Hk
71.20.Nr
71.55.Eq


Icona documento 1) Download Document PDF


Icona documento Open access Icona documento Restricted Icona documento Private

 


Per ulteriori informazioni, contattare: Librarian http://puma.isti.cnr.it

Valid HTML 4.0 Transitional