PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Pavesi M., Manfredi M., Salviati G., Armani N., Rossi F., Meneghesso G., Levada S., Zanoni E., Du S., Eliashevich I. Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress. In: Applied Physics Letters, vol. 84 (17) pp. 3403 - 3405. American Institute of Physics, 2004.
 
 
Abstract
(English)
The optical properties of blue InGaN-based light-emitting diodes aged at high current levels have been studied by electroluminescence and cathodoluminescence. The onset of a broad optical band peaked at about 3.1 eV in devices aged without a heat sink (junction temperature higher than 300 C) has been correlated to an electrothermal threshold effect. The band is attributed to the dissociation of Mg-H complexes inside the p-type layers and to the consequent formation of Mg-related metastable complexes acting as acceptors. Subsequent electron-beam irradiation determines the almost complete quenching of the band.
DOI: 10.1063/1.1734682
Subject Light Emitting Diodes


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