Istituto dei materiali per l'elettronica ed il magnetismo     
Hastas N., Dimitriadis C., Dozsa L., Gombia E., Mosca R. Investigation of single electron traps induced by InAs quantum dots embedded in GaAs layer using the low-frequency noise technique. In: Journal of Applied Physics, vol. 96 (10) pp. 5735 - 5738. American Institute of Physics, 2004.
The properties of the traps induced by InAs quantum dots (QDs), embedded in a GaAs layer grown by molecular beam epitaxy, are investigated by the low-frequency noise measurements using the Au/n-GaAs Schottky diode as a test device. The forward current noise spectra are composed of two noise components: a 1/f-like noise at low frequencies and a generation-recombination (g-r) noise at higher frequencies. The 1/f noise is ascribed to the mobility fluctuations within the space-charge region. The obtained Hooge parameter saH=6310−5d is larger than the expected value considering the phonon or impurity scattering mechanism, indicating the presence of the defects associated with QDs. The analysis of the g-r noise gives a single trap of density of about 1.631014 cm−3 in the part of the GaAs layer located above the QDs.
DOI: 10.1063/1.1801163
Subject InAs quantum dots
electron traps
low-frequency noise technique

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