PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Serenyi M., Frigeri C. Investigation of silicon oxynitride and amorphous silicon multilayers. In: European Physical Journal-Applied Physics, vol. 27 pp. 329 - 332. EDP Sciences, 2004.
 
 
Abstract
(English)
Optical (refractive index) and structutal properties of IiON and amorphous Si multilayers grown by RF sputtering with thickness in the 10-30 nm range have been analysed by ellipsometry and TEM. Satisfactory agreement between the two techniques ais obtained as regards the thickness determination of the SiON films.
DOI: 10.1051/epjap:2004119
Subject Amorphous silicon oxynitride
Amorphous silicon
TEM-EDS
Ellipsometry
68.35.FX
68.55.Jk
81.15.Cd


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