PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Regonini D., Pelosi C., Watts B. E., Leccabue F. Crescita Epitassiale di Carburo di Silicio. Rapporto interno n. 102. Technical report, 2003.
 
 
Abstract
(English)
Silicon carbide is the best candidate to replace conventional semiconductors in hard electronics, but many problems have to be solved before this material can be used in a wide range of applications. Many different methods of SiC epitaxial growth exist. The most important is chemical vapour deposition that requires reduced temperatures to obtain a material showing good properties and low density of defects such as micropipes. We are developing a horizontal MOCVD reactor for the SiC growth using microwave or induction heating. A process will be investigated in order to reduce the growth temperature.
Subject Epitaxial growth of SiC


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