PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Catellani A. Optical Properties of Strained InxGa1-xAs/GaAs Quantum Wells. Rapporto interno n. 70. Technical report, 1992.
 
 
Abstract
(English)
InxGa1-xAs/GaAs strained-layer heterostructures have been proposed and studied as novel III-V semiconductor materials for high-speed optical devices. Despite the lattice mismatch (∼ 7%) between the buk constituents, high quality strained quantum wells and superlattices can be grown, provided the thickness of the strained layers is kept small enough to avoid misfit dislocations generation[l].....
Subject Quantum Wells


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