Istituto dei materiali per l'elettronica ed il magnetismo     
Conti M., Corda G., Matteucci R., Ghezzi C. Oxidation Stacking Faults in Epitaxial Silicon Crystals. Rapporto interno n. 25. Technical report, 1975.
Oxidation stacking-faults (SFs) in epitaxial silicon crystals have been studied by means of preferential etch and X-ray topography. SFs lie on (111) planes and are surrounded by a partial Frank dislocation. Nucleation takes place at crystallographic defects located near the surface of epitaxial layers. These defects appear as etch hillocks after preferential etch. SF length as a function of temperature and time for different thermal treatments is reported. The SF length is controlled by an activation energy of 2.6 e V. This energy, which is nearly one half of the self diffusion activation energy of silicon, supports n SF growth nechanism controlled by vacancy emission.
Subject Stacking Faults (SFs)

Icona documento 1) Download Document PDF

Icona documento Open access Icona documento Restricted Icona documento Private


Per ulteriori informazioni, contattare: Librarian http://puma.isti.cnr.it

Valid HTML 4.0 Transitional