Istituto dei materiali per l'elettronica ed il magnetismo     
Cerutti A., Ghezzi C. X-Ray Observations of Induced Dislocations at Simple Planar Structures in Silicon. Rapporto interno n. 15. Technical report, 1973.
Diffusion induced dislocations in (111) silicon wafers have been studied by X-ray diffraction contract. The Burgers vectors of rectilinear dislocations lying inside the diffused zone and of houndary dislocation loops have been determined. Dislocation loop have been also observed at p-n epitaxial junctions after heating at 1080C. The generation processes of the observed dislocations are briefly discussed.
Subject X-Ray

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