PUMA
Istituto dei materiali per l'elettronica ed il magnetismo     
Cerutti A., Ghezzi C. X-Ray Observations of Induced Dislocations at Simple Planar Structures in Silicon. Rapporto interno n. 15. Technical report, 1973.
 
 
Abstract
(English)
Diffusion induced dislocations in (111) silicon wafers have been studied by X-ray diffraction contract. The Burgers vectors of rectilinear dislocations lying inside the diffused zone and of houndary dislocation loops have been determined. Dislocation loop have been also observed at p-n epitaxial junctions after heating at 1080C. The generation processes of the observed dislocations are briefly discussed.
Subject X-Ray


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