PUMA
Istituto di Biofisica     
Gennari S., Attolini G., Pelosi G., Lottici P. P., Riccò F., Labardi C., Allegrini M., Frediani C. Raman scattering study and AFM morphological characterization of MOVPE-grown (111)-strained heterostructures. In: Journal of Crystal Growth, vol. 166 (1-4) pp. 309 - 313. Elsevier, 1996.
 
 
Abstract
(English)
(111)-oriented GaAs heterolayers have been deposited by metalorganic vapour phase epitaxy (MOVPE) at different III-V ratios and growth times on GaP and InP substrates of both A and B polarities. The strain release has been determined by Raman spectroscopy. The growth mechanisms are discussed on the basis of the images obtained by atomic force microscopy.
DOI: 10.1016/0022-0248(96)00082-6
Subject Raman scattering


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