PUMA
Istituto di Biofisica     
Attolini G., Pelosi G., Gennari S., Lottici P. P., Riccò F., Allegrini M., Frediani C., Lombardi M. Raman scattering in (111) strained heterostructures. In: Microelectronics Journal, vol. 26 (8) pp. 797 - 804. Elsevier, 1995.
 
 
Abstract
(English)
III-V based strained heterostructures grown along [hhk] directions are considered. The proportionality coefficients between the in-plane strain and the shift in the TO and LO phonon frequencies have been calculated from the elastic constants and phonon deformation potentials. GaAs/GaP (111) and GaAs/InP (111) systems, where the GaAs epitaxial layers are in compressive or tensile strain, respectively, have been grown by MOVPE at different times on A and B substrates and investigated by Raman scattering. The corresponding red or blue shifts of the frequencies of the LO and TO phonons are measured and the residual strain parallel to the interface is estimated. The Raman results are discussed on the basis of the morphology of the epilayer investigated by atomic force microscopy.
DOI: 10.1016/0026-2692(95)00039-9
Subject Raman scattering


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